![Schottky Barrier Diodes | Toshiba Electronic Devices & Storage Corporation | Americas – United States Schottky Barrier Diodes | Toshiba Electronic Devices & Storage Corporation | Americas – United States](https://toshiba.semicon-storage.com/content/dam/toshiba-ss-v3/master/en/semiconductor/product/diodes/articles/schottky-barrier-diodes_features_1_en.png)
Schottky Barrier Diodes | Toshiba Electronic Devices & Storage Corporation | Americas – United States
![2-1. Schottky contact (Schottky junction) Φ<sub>m</sub> > Φ<sub>n</sub> | Toshiba Electronic Devices & Storage Corporation | Europe(EMEA) 2-1. Schottky contact (Schottky junction) Φ<sub>m</sub> > Φ<sub>n</sub> | Toshiba Electronic Devices & Storage Corporation | Europe(EMEA)](https://toshiba.semicon-storage.com/content/dam/toshiba-ss-v3/master/en/semiconductor/knowledge/e-learning/basics-of-schottky-barrier-diodes/chap2-2-1_en.png)
2-1. Schottky contact (Schottky junction) Φ<sub>m</sub> > Φ<sub>n</sub> | Toshiba Electronic Devices & Storage Corporation | Europe(EMEA)
![Crystals | Free Full-Text | Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding Crystals | Free Full-Text | Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding](https://www.mdpi.com/crystals/crystals-10-00636/article_deploy/html/images/crystals-10-00636-g001.png)
Crystals | Free Full-Text | Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding
![About the determination of the Schottky barrier height with the C-V method: Journal of Applied Physics: Vol 109, No 7 About the determination of the Schottky barrier height with the C-V method: Journal of Applied Physics: Vol 109, No 7](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.3561372&id=images/medium/1.3561372.figures.f3.gif)
About the determination of the Schottky barrier height with the C-V method: Journal of Applied Physics: Vol 109, No 7
![Nanomaterials | Free Full-Text | Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors Nanomaterials | Free Full-Text | Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors](https://pub.mdpi-res.com/nanomaterials/nanomaterials-10-02346/article_deploy/html/images/nanomaterials-10-02346-g001.png?1606385234)
Nanomaterials | Free Full-Text | Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors
![A Schottky barrier formed by a metal of high workfunction contacting a... | Download Scientific Diagram A Schottky barrier formed by a metal of high workfunction contacting a... | Download Scientific Diagram](https://www.researchgate.net/publication/291356504/figure/fig1/AS:400611335000064@1472524593446/A-Schottky-barrier-formed-by-a-metal-of-high-workfunction-contacting-a-n-type.png)
A Schottky barrier formed by a metal of high workfunction contacting a... | Download Scientific Diagram
![Accurate Analysis of Schottky Barrier Height in Au/2H–MoTe2 Atomically Thin Film Contact | SpringerLink Accurate Analysis of Schottky Barrier Height in Au/2H–MoTe2 Atomically Thin Film Contact | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1007%2Fs13391-021-00284-x/MediaObjects/13391_2021_284_Fig4_HTML.png)
Accurate Analysis of Schottky Barrier Height in Au/2H–MoTe2 Atomically Thin Film Contact | SpringerLink
Thickness-dependent Schottky barrier height of MoS2 field-effect transistors - Nanoscale (RSC Publishing)
![Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes | SpringerLink Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes | SpringerLink](https://media.springernature.com/lw685/springer-static/image/art%3A10.1007%2Fs42452-019-0192-2/MediaObjects/42452_2019_192_Fig1_HTML.png)
Combined thermionic emission and tunneling mechanisms for the analysis of the leakage current for Ga2O3 Schottky barrier diodes | SpringerLink
![A Schottky barrier formed by a metal of high workfunction contacting a... | Download Scientific Diagram A Schottky barrier formed by a metal of high workfunction contacting a... | Download Scientific Diagram](https://www.researchgate.net/profile/Antonio-Di-Bartolomeo-2/publication/291356504/figure/fig1/AS:400611335000064@1472524593446/A-Schottky-barrier-formed-by-a-metal-of-high-workfunction-contacting-a-n-type_Q640.jpg)